Silicon And Carbon: The Chemistry Of Silicon And Carbon

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The only compound of silicon and carbon is silicon carbide (SiC), or carborundum. SiC is produced naturally as the mineral Moissanite, but this is extremely rare, SiC is not known as Terrestrial mineral, since it is only found in meteors. But it is Synthesized from quartz sand and graphite in a Scale However, it has occurred mass in the form of powder For use as an abrasive since 1893. As an abrasive, it has been Used for more than one hundred years in molars and many Other abrasive applications. II. H ISTORIA O F S I C The discovery and identification of a SiC LED 1907, when Round published a brief article entitled "A Note In Carborundum. "The bulk crystalline SiC is prepared using The Lely method patented in 1955. Here SiC was synthesized …show more content…

Many semiconductor materials can melt And they are recrystallized reproducibly in large monocrystal crystals with The help of a seed crystal, as in the Czochralski method Employed in the manufacture of almost all silicon wafers, Allowing reasonably large wafers to be mass produced. How- Because SiC sublimates instead of reasonably melting Attainable pressures, SiC can not be grown by Fusion-growth techniques. This prevented the realization of SiC Crystals suitable for mass production until the end 1980, the experimental SiC electronic devices were Small (typically ~ 1 cm 2), irregularly shaped SiC crystal Platelets grown as a by-product of the Acheson process Industrial abrasives (for example, sandpaper) or Lely process. In the Lely process, SiC sublimated polycrys- SiC Tallina at temperatures near 2500 ° C are randomly Condensed in the walls of a cavity that forms small hexagons Platelets. Although these small non-reproducible crystals They allowed some basic research into SiC electronics, It is clearly not suitable for the mass production of semiconductors. As Silicon became the dominant semiconductor that Revolution of solid-state technology, while interest Microelectronics was limited. B. Sublimation Growth of SiC

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