Numerical Investigation of Thermal Characteristics of Si Melt Flow in Directional Solidification Process

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Numerical investigation of thermal characteristics like temperature distribution , velocity field, stream line, Peclet numbers and Reynolds numbers in Si melt are performed for directional solidification crystal growth processes. One of the greatest technological and scientific challenges of multi-crystalline silicon growth is to achieve homogeneity of the material properties in the grown crystal. It affected by fluctuations of the growth rate of the crystal. One of the possible causes for fluctuations of the growth rate is the instationary convection in the melt. The aim is to examine the influence of the thermal convection effect in the melt. Dimensionless numbers are of key importance in parametric analysis of non-linear complex transport phenomena of bulk silicon growth process. They are also extremely useful in understanding of the heat and mass transfer of fluid flow on Si melt during solidification processes. The flow pattern influences the quality of the crystal through the convective heat and mass transport. The computations are carried out in a 2D/3D axis symmetric model by the finite-element technique. The results indicate that thermal forces have a dramatic effect on the flow of silicon melt. The simulation results are in reasonable agreement with the predictions of the theoretical approach. Kew words: Simulation and modeling; Thermal analysis; Navier-Stokes equations; Solar energy materials; Finite element analysis; 1. INTRODUCTION The unsustainable nature of fossil fuels as an energy source, from the point of view of future availability and environmental impact, has spurred an interest in diversification of energy sources, with particular interest in renewable energy. The photovoltaic (PV) industry is a player... ... middle of paper ... ...anesh, Satoshi Nakano et.al, Effect of crucible rotation on oxygen concentration during unidirectionalsolidification process of multicrystalline silicon for solar cells, Journal of Crystal Growth 311 (2009) 1123–1128 [11] Balaji Devulapalli and Milind S. Kulkarni, Modeling multi-Crystalline Silicon Growth in Directional Solidification Systems, ECS Transactions, 18 (1) 1023-1029 (2009). [12] Sudheer M.Pimputkar and Simon Ostrach ,Convective effects in crystals grown from melt., JournalofCrystalGrowth 55 (1981) 614—646. [13] http://www.comsol.co.in/support/books [14] M.Nacati Ozisik, Heat transfer(a basic approach), McGraw-Hill book company,New york,1985. [15] L. Braescu, and T. F. George , Critical Marangoni numbers and their effect on the dopant distribution in silicon fibers, Int. Jou.of .Math Models and Methods in Applied Sciences, Issue 3, Volume 2, 2008.

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